WIN半导体公司正在使用其PIH1-10先进的GaAs平台，为5G前端模块提供完全集成的单芯片解决方案。PIH1-10工艺集成了单片PIN二极管，能够通过50GHz的电源开关，进入先进的100GHz ft伪晶HEMT平台。该技术提供了优越的发射功率性能和较低的接收机噪声系数，这是5G系统的要求。
这种多功能技术为用户提供了增加片上功能和更高集成度的多种途径。除了单片PIN二极管和高性能pHEMT器件，PIH1-10平台还提供用于混频器或检测器的线性肖特基二极管，以及优化逻辑功能和偏置控制的增强和耗尽晶体管。当与射频隔离晶圆通孔结合时，这种抗湿技术使可用于MIMO功能的紧凑芯片集成的晶圆级封装选择，在可用板空间有限的情况下。
“The PIH-10 technology leverages WIN’s qualified production techniques and industry leading manufacturing scale to provide a new platform that can be extended and optimized to address rapidly evolving market requirements,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp. “Compound semiconductors, and particularly GaAs, remain the technology of choice for demanding amplifier functions from 500MHz through 100GHz and above. This advantage comes from higher gain, linearity and power added efficiency provided by GaAs devices as compared to RF CMOS or SiGe. This performance advantage will be critical in the 28-40GHz bands envisioned for 5G where gain and efficiency at 6-10dB back-off will determine system-level performance. WIN’s GaAs pseudomorphic HEMT is the foundation for many of todays high performance amplifiers operating in the 20GHz to 100GHz range, and incorporating low loss PIN switch functionality enables our customers to field unique single chip 5G solutions without sacrificing performance.”
赢取欧洲微波炉2017年半导体公司
赢得半导体公司将在2017年10月8日至13日在德国举行的2017年欧洲微波周的展台111B中展示其化合物半导体RF和MM波解决方案。
欲了解更多信息，请访问WIN半导体公司http://www.winfoundry.com/en_us/index.aspx.
赢得半导体公司
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