Microsemi宣布新的IdealPoe二极管桥

Microsemi Corporation（纳斯达克：MSCC），通过电源，安全，可靠性和性能差异化的半导体解决方案提供商，宣布其新的PD70224 IdealPoe™二极管桥，一种基于MOSFET的全桥整流器。The device’s low-RDS 0.16Ohm N-channel MOSFETS allow for much higher overall efficiency and higher output power, particularly when used in powered devices for Power-over-Ethernet (PoE) and Power-over-HDBaseT (PoH) applications in the communications and enterprise markets including wireless LAN access points, small cells and small switches/routers. Unlike similar solutions currently on the market, this highly integrated device eliminates the need to add additional external components such as controllers and field effect transistors (FETs), reducing overall system cost as well as board real estate.

“在需要高效或高功率的PoE和Poh供电的解决方案中，系统设计人员用于使用离散组件来实现其设计。现在，新的EvalePoe二极管桥PD70224实现了输入功率器件PoE桥，提供了一个集成的解决方案，在市场上独特，提供了一流的性能，“MicroSemi的Poe产品线Manager说。“这种高度集成的解决方案耗费较少的电源，简化了客户的设计并节省了印刷电路板空间。”

微笑’s PD70224 can support over 1 amp (A) of current, making it the ideal choice not only for modern energy-saving two-pair applications compliant with IEEE802.3af and IEEE802.3at, but also for four-pair powered devices using Universal PoE (up to 51 watts) and PoH (up to 95 watts). The entire drive circuitry for driving the MOSFETs is on-chip, including a charge pump for driving the high-side N-channel MOSFETs. The total forward drop (bridge offset) introduced by the ideal bridge rectifier is only 192 millivolt (mV) at 0.6A, compared to a standard bridge rectifier that typically presents 2,000mV of forward drop.

其他产品包括：